Paper
11 May 2009 Implications of image plane line-edge roughness requirements on extreme ultraviolet mask specifications
Patrick P. Naulleau, Simi A. George
Author Affiliations +
Abstract
Achieving line-edge/width roughness (LER/LWR) specifications remains as one of the most significant challenges facing the commercialization of extreme ultraviolet (EUV) lithography. LER is typically viewed as a resist problem; however, recent simulation results have shown that the mask can also be a significant contributor. Problems arise from both mask absorber LER as well as mask multilayer roughness leading to random phase variations in the reflected beam and consequently speckle. Here we describe these effects in detail and explore how they will impact EUV mask requirements for the 22-nm half-pitch node and beyond. Process window analysis yields mask multilayer roughness specifications on the order of 50 pm.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Patrick P. Naulleau and Simi A. George "Implications of image plane line-edge roughness requirements on extreme ultraviolet mask specifications", Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73790O (11 May 2009); https://doi.org/10.1117/12.824265
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CITATIONS
Cited by 21 scholarly publications and 1 patent.
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KEYWORDS
Photomasks

Line edge roughness

Line width roughness

Extreme ultraviolet

3D modeling

Nanoimprint lithography

Speckle

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