11 May 2009 Mask-induced aberration in EUV lithography
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Proceedings Volume 7379, Photomask and Next-Generation Lithography Mask Technology XVI; 73790P (2009) https://doi.org/10.1117/12.824266
Event: Photomask and NGL Mask Technology XVI, 2009, Yokohama, Japan
Abstract
We estimated aberrations using Zernike sensitivity analysis. We found the difference of the tolerated aberration with line direction for illumination. The tolerated aberration of perpendicular line for illumination is much smaller than that of parallel line. We consider this difference to be attributable to the mask 3D effect. We call it mask-induced aberration. In the case of the perpendicular line for illumination, there was a difference in CD between right line and left line without aberration. In this report, we discuss the possibility of pattern formation in NA 0.25 generation EUV lithography tool. In perpendicular pattern for EUV light, the dominant part of aberration is mask-induced aberration. In EUV lithography, pattern correction based on the mask topography effect will be more important.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yumi Nakajima, Yumi Nakajima, Takashi Sato, Takashi Sato, Ryoichi Inanami, Ryoichi Inanami, Tetsuro Nakasugi, Tetsuro Nakasugi, Tatsuhiko Higashiki, Tatsuhiko Higashiki, } "Mask-induced aberration in EUV lithography", Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73790P (11 May 2009); doi: 10.1117/12.824266; https://doi.org/10.1117/12.824266
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