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11 May 2009 E-beam shot count estimation at 32 nm HP and beyond
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Proceedings Volume 7379, Photomask and Next-Generation Lithography Mask Technology XVI; 737917 (2009) https://doi.org/10.1117/12.824284
Event: Photomask and NGL Mask Technology XVI, 2009, Yokohama, Japan
Abstract
Recent Low k1 era requires aggressive OPC technology with advanced lithography technology. The aggressive OPC contains the rounded pattern and a lot of assistant pattern which are the main source to increase the shot division. We have defined the shot complexity, which is defined by the ratio of number of shot between the interested pattern and the 1:1 L/S pattern. Based on shot complexity parameter, we have estimated the writing time as the device node decreases. We expect that the aggressive OPC and the high dose could generate severely the writing time issue in 32nm node era.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jin Choi, Sang Hee Lee, Dongseok Nam, Byung Gook Kim, Sang-Gyun Woo, and Han Ku Cho "E-beam shot count estimation at 32 nm HP and beyond", Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 737917 (11 May 2009); https://doi.org/10.1117/12.824284
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