11 May 2009 Novel OPC and DfM methodology for 3D memory device
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Proceedings Volume 7379, Photomask and Next-Generation Lithography Mask Technology XVI; 73791O (2009) https://doi.org/10.1117/12.824301
Event: Photomask and NGL Mask Technology XVI, 2009, Yokohama, Japan
Abstract
Novel optical proximity correction (OPC) and design for manufacturability (DfM) methodology for threedimensional (3D) memory device is proposed to overcome emerging hotspot issues caused by larger process proximity effect (PPE) due to unavoidable high-aspect patterning process. To realize robust pattern formation for lithography and reactive-ion etching (RIE) processes, the following methodologies are introduced: i) OPC is carried out by using averaged or designed optics not ideal to make robust pattern formation for optical variation of exposure tool, ii) lithography compliance check (LCC) is done under the worst optical condition to detect hotspots induced by optical variation of exposure tool, and modification of layout and OPC condition is performed to remove hotspots, iii) hotspots induced by RIE process are checked by using etching simulation with empirical RIE model, and modification of layout, PPC and OPC scheme is performed to remove hotspots. In this study, it is confirmed that our proposed novel OPC and DfM methodology is promising for robust pattern formation in upcoming 3D memory device.
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Takafumi Taguchi, Toshiya Kotani, Hidefumi Mukai, Hiromitsu Mashita, Katsumi Iyanagi, Koji Hashimoto, Soichi Inoue, "Novel OPC and DfM methodology for 3D memory device", Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73791O (11 May 2009); doi: 10.1117/12.824301; https://doi.org/10.1117/12.824301
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