11 May 2009 The art of photomask materials for low-k1-193nm lithography
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Proceedings Volume 7379, Photomask and Next-Generation Lithography Mask Technology XVI; 73791Q (2009) https://doi.org/10.1117/12.830600
Event: Photomask and NGL Mask Technology XVI, 2009, Yokohama, Japan
Abstract
The resolution of photomask patterns were improved with a hardmask (HM) system. The system which is thin Sicompounds layer is easily etched by the hyper-thin resist (below 100nm thickness). The HM material has sufficient etching selectivity against the chrome-compounds which is the second layer chrome absorber for the phase-shifter. This hardmask layer has been completely removed during the phase-shifter etching. It means that the conventional phase-shit mask (PSM) has been made with the ultimately high-resolution without configuration changes. Below 50nm resolution of PSM was made with 90nm thickness resist on HM layer in this paper. The CD bias between a resist feature CD and a chrome feature CD was almost zero (below 1nm) in the optimized etching condition. We confirmed that the mask performances were the equal to COMS (Cr-HM on MoSi binary mask) in resolution and CD linearity. The performances of hardmask blanks will be defined by resist performance because of almost zero bias.
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Masahiro Hashimoto, Masahiro Hashimoto, Hiroyuki Iwashita, Hiroyuki Iwashita, Hideaki Mitsui, Hideaki Mitsui, } "The art of photomask materials for low-k1-193nm lithography", Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73791Q (11 May 2009); doi: 10.1117/12.830600; https://doi.org/10.1117/12.830600
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