As the nano-lithography technology continues to develop towards advanced generation of ArF immersion lithography,
the quality of ArF EAPSM becomes the most valuable factor for worldwide Maskshop. Therefore outturn of ArF
EAPMS increase continuously, and people who work in the fields of semiconductor engineering give consequence to
good quality of ArF EAPSM until the EUV lithography generation. Because 300mm wafer litho-facility use higher
exposure energy, wider shot field and more shots per a wafer for achieving more memory(DRAM or Flash) chips than
200mm exposure facility, photo engineer wants unchanged initial condition of mask quality(CD MTT, CD Uniformity,
repeating defect, phase shift and transmittance). In other words, mask manufacturer must focus on the concept of ArF
EAPSM 'life time'.
We have investigated the influence grade inducing the lithographic variation between the growth of exposure energy
based Haze phenomena, thin organic pellicle membrane characteristics, and we have verified that the ArF pellicle
durability is one of the most important evidence for improvement of life time of ArF EAPSM.
In this study, related with ArF EAPSM life time, we tried to evaluate the influence of ArF pellicle characteristic
consisting of pellicle membrane transmittance strength (durability against ArF laser source) and non acid mask condition
for the period of non Haze contamination without added re-pellicle → re-cleaning cycle. Metrological inspection and
evaluation was conducted with several equipment and analysis including mask inspection, Scatterometer, IC, ArF laser