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11 May 2009 Plasma optical emission analysis for chamber condition monitor
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Proceedings Volume 7379, Photomask and Next-Generation Lithography Mask Technology XVI; 73791U (2009) https://doi.org/10.1117/12.824306
Event: Photomask and NGL Mask Technology XVI, 2009, Yokohama, Japan
Abstract
Optical emission represents the bulk property of plasma, which in turn can be correlated to the chamber surface condition and can be exploited for monitoring and characterizing chamber condition. This presentation demonstrates the approach of utilizing plasma optical emission spectra (OES) for the application on Applied Materials' TetraTM etcher chamber condition monitor. Time-resolved plasma optical emission spectra are collected with a spectrometry unit built in to the TetraTM photomask etch module. Studies on OES analysis show that information related to chamber surface condition can be correlated to the changes in emission spectrum of plasma. The effectiveness of this methodology can be verified by Cr etch rates. Results can lead to procedure development for chamber monitoring, chamber recovery and chamber seasoning applications.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhigang Mao, Tiecheng Zhou, Michael Grimbergen, Darin Bivens, David Knick, Renee Koch, Madhavi Chandrachood, Jeff Chen, Ibrahim Ibrahim, and Ajay Kumar "Plasma optical emission analysis for chamber condition monitor", Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73791U (11 May 2009); https://doi.org/10.1117/12.824306
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