11 May 2009 Applied analytics on EAPSM Cr plasma etch optimization utilizing design of experiment
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Proceedings Volume 7379, Photomask and Next-Generation Lithography Mask Technology XVI; 73791W (2009) https://doi.org/10.1117/12.824309
Event: Photomask and NGL Mask Technology XVI, 2009, Yokohama, Japan
Abstract
Traditional flat etch signature was preferred in photomask plasma assisted etch process to avoid introducing undesirable signatures in final results. However, for continuous shrinking tolerance requirements, some CD issues initiated by other factors can be compensated by the etch signatures. This effect needs to be explored more accurately. As mask plasma etching occurs in a very complicated system, and to optimize dry etch process sometimes has to meet tradeoff among some parameters, proper statistical method is helpful on exploring etch signatures and predicting its complexity. Due to Cr etch process importance and complexity, in this paper we demonstrate a detailed design of experiment (DOE) with Box-Behnken design to characterize Cr etch process on EAPSM blank. The SAS software is the tool used for the experiment data analysis, exploration, modeling and optimization. It is intended to more fully describe and predict the Cr etch behavior on the mask dry etcher including etch CD global uniformity, etch CD movement (bias), isolated/dense etch CD bias and etch CD bias linearity which are currently critical mask etch specifications. The regression models of these responses and the optimal results are obtained in this experiment. Some interactions are found among these responses from the response prediction profiler in the SAS software. Etch uniformity radial error contribution is also studied in this paper.
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Ming Jing Tian, Ming Jing Tian, Eugene Wang, Eugene Wang, Zhen Hua Zhu, Zhen Hua Zhu, } "Applied analytics on EAPSM Cr plasma etch optimization utilizing design of experiment", Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73791W (11 May 2009); doi: 10.1117/12.824309; https://doi.org/10.1117/12.824309
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