11 May 2009 Quantification of electron-beam proximity effects using a virtual direct write environment
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Proceedings Volume 7379, Photomask and Next-Generation Lithography Mask Technology XVI; 737921 (2009) https://doi.org/10.1117/12.824314
Event: Photomask and NGL Mask Technology XVI, 2009, Yokohama, Japan
Abstract
An e-beam exposure module has been developed for an existing lithography simulator, covering aspects of e-beam inter-action with the stack, exposure of the resist by the e-beam as well as development of the resist. The goal of the simulation is to complement experimental data with insights that are difficult or impossible to obtain experimentally and to provide advanced capabilities for process optimization. Simulations are performed for an iso-dense pattern to show that in the case of 5kV acceleration voltage, a standard dose correction works well for tight beams with 5nm blur but is very challenging for 30nm beam blur. Geometric corrections will most likely be needed for a wide beam blur.
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Martin Schulz, Martin Schulz, Peter Brooker, Peter Brooker, Alex Zepka, Alex Zepka, Gary Meyers, Gary Meyers, } "Quantification of electron-beam proximity effects using a virtual direct write environment", Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 737921 (11 May 2009); doi: 10.1117/12.824314; https://doi.org/10.1117/12.824314
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