11 May 2009 Phase-shift/transmittance measurements in a micro pattern using MPM193EX
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Proceedings Volume 7379, Photomask and Next-Generation Lithography Mask Technology XVI; 737925 (2009) https://doi.org/10.1117/12.824318
Event: Photomask and NGL Mask Technology XVI, 2009, Yokohama, Japan
Abstract
A new direct Phase-shift/Transmittance measurement tool "MPM193EX" has been developed to respond to the growing demand for higher precision measurements of finer patterns in ArF Lithography. Specifications of MPM193EX are listed below along with corresponding specifications of the conventional tool MPM193. 1) Phase-shift [3 Sigma]: 0.5 deg. (MPM193) => 0.2 deg. (MPM193EX) 2) Transmittance [3 Sigma]: 0.20 % (MPM193) => 0.04 % (MPM193EX) 3) Minimum measurement pattern width: 7.5 μm (MPM193) => 1.0 μm (MPM193EX) Furthermore, new design optics using an ArF Laser and an objective lens with long working distance allows measurements of masks with pellicles. The new method for improving the measurement repeatability is based on elimination of influence from instantaneous fluctuation in interferometer fringes by scanning two adjacent areas simultaneously. Also, MPM193EX is equipped with high-resolution and stable optics. The newly employed auto-focus system in MPM193EX accurately adjusts, by a new image processing method using high-resolution optics, the focus height that is one of the most important factors for measurements in a micro pattern.
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Hiroto Nozawa, Takayuki Ishida, Satoru Kato, Osamu Sato, Koji Miyazaki, Kiwamu Takehisa, Naoki Awamura, Hideo Takizawa, Hal Kusunose, "Phase-shift/transmittance measurements in a micro pattern using MPM193EX", Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 737925 (11 May 2009); doi: 10.1117/12.824318; https://doi.org/10.1117/12.824318
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