11 May 2009 Actinic mask inspection using an extreme ultraviolet microscope
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Proceedings Volume 7379, Photomask and Next-Generation Lithography Mask Technology XVI; 73792J (2009) https://doi.org/10.1117/12.824333
Event: Photomask and NGL Mask Technology XVI, 2009, Yokohama, Japan
Abstract
We constructed an extreme ultraviolet microscope (EUVM) system for actinic mask inspection that consists of Schwarzschild optics and an X-ray zooming tube. This system was used to inspect finished extreme ultraviolet lithography (EUVL) masks and Mo/Si coated substrates of ULE glass. And we have fabricated programmed phase defects on the blanks used for inspection. The EUVM was able to resolve a programmed line-pit defect with a width of 40 nm and a depth of 10 nm, and also with a width of 70 nm and a depth of 2.0 nm. However, a 75-nm-wide 1.5-nm-deep pit defect was not resolved. Also, the EUVM was able to resolve a programmed hole-pit defects with widths ranging from 35 nm to 170 nm and depths ranging from 2.5 nm to 2.2 nm. However, 20-nm-wide 1.5-nm-deep hole-pit defects were not resolved. These results agree with the simulation results perfectly. Thus, in this study, one critical dimension of a pit defects was experimentaly estimated to be a width of 20 nm and a depth of 2.0 nm.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kei Takase, Kei Takase, Yoshito Kamaji, Yoshito Kamaji, Takafumi Iguchi, Takafumi Iguchi, Takashi Sugiyama, Takashi Sugiyama, Toshiyuki Uno, Toshiyuki Uno, Tetsuo Harada, Tetsuo Harada, Takeo Watanabe, Takeo Watanabe, Hiroo Kinoshita, Hiroo Kinoshita, } "Actinic mask inspection using an extreme ultraviolet microscope", Proc. SPIE 7379, Photomask and Next-Generation Lithography Mask Technology XVI, 73792J (11 May 2009); doi: 10.1117/12.824333; https://doi.org/10.1117/12.824333
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