24 August 2009 ZnO-based material and UV detector
Author Affiliations +
Proceedings Volume 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors; 738103 (2009) https://doi.org/10.1117/12.833339
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China
Abstract
ZnO is the most promising material for the application of an ultraviolet (UV) detector. However the shortage of ptype ZnO becomes the biggest blockage for fabricating ZnO-based semiconductor device. In this paper, following experiments had been done: Firstly, the zinc nitride powders were synthesized through the nitridation reaction of Zn power with NH3, and the optimized synthesis temperature was at 600°C. Next, the zinc nitride powder was fabricated into a zinc nitride sputtering target by a single pressing process. Thirdly a thin layer of zinc nitride film was formed on silicon and quartz substrate using magnetron sputtering method. Fourthly, the zinc nitride film was oxidized into p-type ZnO, and the best optimized temperature for forming p-type ZnO by oxidizing Zn3N2 thin film was at 500°C. Lastly, the ohmic contact for p-ZnO and ZnO based detector were fabricated. It was found Al and Ni/Au showed ohmic contact properties to n- Si and p-ZnO, respectively, and the p-ZnO/n-Si junction as a UV detector was feasible.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xin Wang, Xin Wang, Rong Xiang, Rong Xiang, Xinglai Zhang, Xinglai Zhang, Jingquan Tian, Jingquan Tian, Ye Li, Ye Li, DeLong Jiang, DeLong Jiang, Qingduo Duanmu, Qingduo Duanmu, } "ZnO-based material and UV detector", Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 738103 (24 August 2009); doi: 10.1117/12.833339; https://doi.org/10.1117/12.833339
PROCEEDINGS
8 PAGES


SHARE
Back to Top