24 August 2009 Impact of B-site Hf4+-doping on the structural and ferroelectric properties of Bi4Ti3O12 thin films
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Proceedings Volume 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors; 738107 (2009) https://doi.org/10.1117/12.835284
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China
Abstract
Hf 4+ -doped and undoped (028)-oriented Bi4Ti 3O12 ferroelectric films with the same thickness have been deposited on two SrRuO3 -covered (111)-oriented SrTiO3 substrates by pulsed laser deposition (PLD). The structures of the two films were studied by x-ray diffraction (XRD). It was found that the Hf4+ ion doped at site B has greatly improved the remnant polarization and fatigue property. That because the Hf4+ ion has changed the structure of Hf4+ -doped Bi 4 Ti 3 O12 film a lot including a tensile strain along a axis, a triple-domain structure and distortion of oxygen octahedral which result in an increase of the remnant polarization. And the triple-domain structure and the reduction of oxygen vacancies also caused by Hf4+ ion doping improved the fatigue property.
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Yu Zhang, Yu Zhang, Changming Zuo, Changming Zuo, Xiaoping Wang, Xiaoping Wang, Jun Zhu, Jun Zhu, Hong Ji, Hong Ji, } "Impact of B-site Hf4+-doping on the structural and ferroelectric properties of Bi4Ti3O12 thin films", Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 738107 (24 August 2009); doi: 10.1117/12.835284; https://doi.org/10.1117/12.835284
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