Impact of B-site Hf4+-doping on the structural and ferroelectric properties of Bi4Ti3O12 thin films

Yu Zhang; Changming Zuo; Xiaoping Wang; Jun Zhu; Hong Ji

doi:10.1117/12.835284

24 August 2009 Impact of B-site Hf⁴⁺-doping on the structural and ferroelectric properties of Bi₄Ti₃O₁₂ thin films

Yu Zhang, Changming Zuo, Xiaoping Wang, Jun Zhu, Hong Ji

Proceedings Volume 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors; 738107 (2009) https://doi.org/10.1117/12.835284
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China

Abstract

Hf ⁴⁺ -doped and undoped (028)-oriented Bi₄Ti ₃O₁₂ferroelectric films with the same thickness have been deposited on two SrRuO₃ -covered (111)-oriented SrTiO₃ substrates by pulsed laser deposition (PLD). The structures of the two films were studied by x-ray diffraction (XRD). It was found that the Hf⁴⁺ ion doped at site B has greatly improved the remnant polarization and fatigue property. That because the Hf⁴⁺ ion has changed the structure of Hf⁴⁺ -doped Bi ₄ Ti ₃ O₁₂ film a lot including a tensile strain along a axis, a triple-domain structure and distortion of oxygen octahedral which result in an increase of the remnant polarization. And the triple-domain structure and the reduction of oxygen vacancies also caused by Hf⁴⁺ ion doping improved the fatigue property.

Citation Download Citation

Yu Zhang, Changming Zuo, Xiaoping Wang, Jun Zhu, and Hong Ji "Impact of B-site Hf⁴⁺-doping on the structural and ferroelectric properties of Bi₄Ti₃O₁₂ thin films", Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 738107 (24 August 2009); https://doi.org/10.1117/12.835284

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