24 August 2009 The case for electro-optic waveguide devices from ferroelectric (Pb,La)(Zr,Ti)O3 thin film epilayers
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Proceedings Volume 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors; 73810F (2009) https://doi.org/10.1117/12.835789
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China
Abstract
(Pb,La)(Zr,Ti)O3 (PLZT) thin films were grown epitaxially on MgO(001) substrate by radio frequency magnetron sputtering. Different ridge-type waveguides, including a Mach-Zehnder interferometer with co-planar metal electrodes, were defined in the PLZT epilayer using standard photolithographic techniques. The propagation losses for transverse electric polarized infrared light (λ0 = 1550 nm) in these ridge-type channel waveguides were measured at ~10 dB/cm. Electro-optic modulation was demonstrated with a half-wave voltage Vπ ≈ 150 V for a 3 mm interaction length, corresponding to a Pockels coefficient r51 ≈ 8.3 pm/V. Photonic crystal slabs (PCSs) were defined by etching a hexagonal two-dimensional lattice of holes in prepatterned ridge-type waveguides, using a focused ion beam. The sidewalls of the etched holes were inclined by an angle of ~10°. The impact on the transmission properties of these PCSs caused by out-of-plane structural asymmetries, such as deviation from a cylindrical shape of the FIB-etched air holes and the presence of a substrate with refractive index different from that of air, was investigated by numerical simulation. Auger depth profiling was used to investigate Ga+ ion implantation into the PLZT epilayer during FIB processing. The measurements suggest that such implantation of Ga+ is confined to the uppermost ~50 nm of the sample surface.
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Ørnulf Nordseth, Ørnulf Nordseth, Jon Øyvind Kjellman, Jon Øyvind Kjellman, Change Chuan You, Change Chuan You, Arne Røyset, Arne Røyset, Thomas Tybell, Thomas Tybell, Jostein K. Grepstad, Jostein K. Grepstad, } "The case for electro-optic waveguide devices from ferroelectric (Pb,La)(Zr,Ti)O3 thin film epilayers", Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 73810F (24 August 2009); doi: 10.1117/12.835789; https://doi.org/10.1117/12.835789
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