24 August 2009 Effect of power on the structure and property of copper nitride films by DC reactive magnetron sputtering
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Proceedings Volume 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors; 738110 (2009) https://doi.org/10.1117/12.833436
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China
Abstract
Copper nitride thin films were deposited on glass substrates by reactive DC (direct current) magnetron sputtering with 0.8Pa N2-gas partial pressure (the total pressure was 1Pa), 100°C substrate temperature and different DC powers. X-ray diffraction measurements show that the films are composed of Cu3N crystallites with anti-ReO3 structure and exhibit preferential orientation to the [111] direction. The intensity of the preferred crystalline orientation of the films increased with DC power. It is found that the DC power not only affects the crystal structure of the Cu3N films but also affects its resistivity. The resistivity of Cu3N films decreased sharply with increasing of the DC power, reaching a value 1.33Ωcm. From this work, it is concluded that the optimum DC sputtering power for producing high-quality and well [111]-oriented Cu3N films on glass substrates is 80W, with 0.8Pa N2-gas partial pressure and 1000C substrate temperature.
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Xing-Ao Li, Jian-Ping Yang, An-You Zuo, Zuo-Bin Yuan, Zhu-Lin Weng, Xiao-Yong Xiong, "Effect of power on the structure and property of copper nitride films by DC reactive magnetron sputtering", Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 738110 (24 August 2009); doi: 10.1117/12.833436; https://doi.org/10.1117/12.833436
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