Vanadium thin films were deposited on silicon nitride substrates by direct current facing targets magnetron
sputtering, and then were annealed in room air ambient to form the vanadium oxide(VOx) thin films. The VOx thin films
made by this way have high TCR(Temperature Coefficient of Resistance) near room temperature. Compared with
reactive sputtering[1,2], the metal-oxygenation method needs fewer preparative parameters which are very easy to control.
The main target of this paper is to study the electrical property of the VOx thin films, especially the relationship between
the TCR of VOx thin films and their preparative parameters. Orthogonal experiment was used to choose optimal
preparative parameters, which include sputtering pressure, sputtering time, annealing time and annealing temperature.
Then the resistance-temperature property was measured, and the results show that the VOx thin film which was prepared
after sputtered at 1.5 Pa for 20 minutes at room temperature and annealed at 400°C for 1.5h has the best
resistance-temperature property. And near room temperature, its TCR is -3.25%/K, which is twice as much as that of
metal material. And the VOx thin film has potential application in uncooled infrared microbolometer[3~5].