Numerical calculation and simulation analysis of electrical field characteristics for the electrical resistance tomography system

Yanjun Zhang; Deyun Chen; Lili Wang

doi:10.1117/12.833444

24 August 2009 Numerical calculation and simulation analysis of electrical field characteristics for the electrical resistance tomography system

Yanjun Zhang, Deyun Chen, Lili Wang

Author Affiliations +

Proceedings Volume 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors; 738119 (2009) https://doi.org/10.1117/12.833444
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China

Abstract

Sensitivity field in electrical resistance tomography system is affected by the distribution of multiphase medium, and the data of sensitivity distribution which are obtained by theoretical calculation can be used as prior experimental knowledge for image reconstruction, so it is necessary to analyze the distribution of the sensitivity field to decrease error of soft field and improve the quality of the image reconstruction. In this paper at the basis of analyzing the principle of electrical resistance tomography system, the mathematical model of sensitivity field is built by utilizing finite element method. Through study field with disperse phase, the factors affecting the distribution of the sensitivity field and rules are analyzed, the calculation of sensitivity distribution and visualized simulation are achieved The experiments show that the finite element model is right, the sensitivity field proposed is in accordance with the practice and the computation velocity is about 10seconds, which provides the basis for related image reconstruction algorithms.

Citation Download Citation

Yanjun Zhang, Deyun Chen, and Lili Wang "Numerical calculation and simulation analysis of electrical field characteristics for the electrical resistance tomography system", Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 738119 (24 August 2009); https://doi.org/10.1117/12.833444

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