24 August 2009 Nanocrystalline Si-based metal-oxide-semiconductor photodetectors
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Proceedings Volume 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors; 73811H (2009) https://doi.org/10.1117/12.833385
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China
Abstract
In this paper, we report on a MOS-like structured Si photodetector whose response range covers UV-VIS-NIR with good responsivity. The devices have an Al/Silicon-Rich Oxide (SRO)/Si MOS-like structure fabricated with standard Si IC technology. Its reverse leakage current is as small as 10-10 A at V= -5 V. However, when illuminated with white or UV light with intensity of ~3.6 mW/cm2, the reverse current increase greatly. The photocurrent to dark current ratio can be as high as 1.5×105 for white light and 8.7×104 for UV light at V= -5 V, indicating that the structure is very sensitive to both visible and UV light. The spectral response of the device shows good responsivity from 200 nm to near infrared, with maximum responsivity of 0.78 A/W at 900 nm. The role of the SRO layer and the Si substrate in obtaining such a high photoresponse in UV-VIS-NIR range was analyzed.
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Zhenrui Yu, Zhenrui Yu, Mariano Aceves-Mijares, Mariano Aceves-Mijares, J. A. Luna Lopez, J. A. Luna Lopez, Jinxiang Deng, Jinxiang Deng, "Nanocrystalline Si-based metal-oxide-semiconductor photodetectors", Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 73811H (24 August 2009); doi: 10.1117/12.833385; https://doi.org/10.1117/12.833385
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