24 August 2009 The research on the surface structure and conductivity of free-standing diamond films for photo-transistor applications
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Proceedings Volume 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors; 73811M (2009) https://doi.org/10.1117/12.835258
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China
Abstract
Free-standing polycrystalline diamond films with a thickness of about 200 μm were grown by microwave plasma chemical vapor deposition (MPCVD) method. Raman spectra indicated high quality diamond film of the nucleation surface. AFM result indicated the nucleation surface was quite smooth with a mean surface roughness (RMS) of about 10 nm. The sheet carrier densities and sheet resistivities of hydrogenated nucleation surfaces of diamond film under different annealing temperatures were investigated by Hall effect measurement. The sheet carrier density and sheet resistivity remained in a relatively stable range until the annealing temperature above 200 ºC, and the sheet carrier density dropped drastically and sheet resistivity rose sharply, achieving a sharp change at an annealing temperature of 250 °C. The ultra-violet Raman spectra and infrared spectra showed CHx stretching modes at the hydrogenated nucleation surface, whereas almost little hydrogen incorporation on annealed sample.
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Yi Zhang, Yi Zhang, Qi Xiao, Qi Xiao, Lin-jun Wang, Lin-jun Wang, Qing-kai Zeng, Qing-kai Zeng, Jian Huang, Jian Huang, Ke Tang, Ke Tang, Ji-jun Zhang, Ji-jun Zhang, Jia-hua Min, Jia-hua Min, Wei-min Shi, Wei-min Shi, Yi-ben Xia, Yi-ben Xia, "The research on the surface structure and conductivity of free-standing diamond films for photo-transistor applications", Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 73811M (24 August 2009); doi: 10.1117/12.835258; https://doi.org/10.1117/12.835258
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