24 August 2009 Preparation and photoelectric properties of a thin-film nanocrystalline diamond phototransistor
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Proceedings Volume 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors; 73811N (2009) https://doi.org/10.1117/12.835508
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China
Abstract
P-type hydrogenated nanocrystalline diamond (NCD) film on silicon substrate was realized by microwave plasma chemical vapor deposition (MPCVD) method followed by hydrogen plasma treatment. And then a metal-semiconductor field-effect transistor (MESFET), where ohmic contacts as source and drain were formed by depositing gold and Schottky gate contact with a gate length Lg of 10 μm was formed by depositing metal aluminium, was successfully fabricated with surface p-channel based on the above NCD film. Atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman spectroscopy and Fourier-transform infrared spectroscopy (FTIR) were applied to characterize the structure and the surface morphology of the hydrogenated NCD film. The drain source current-voltage (IDS-VDS) characteristics showed enhancement mode operation of the surface p-channel MESFET could be obtained despite the Al gate was crossing many grain boundaries. And a maximum channel current IDS (max) = 25.8 μA at VGS= -2.0 V with VDS = -10 V, were obtained.
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Qian Fang, Qian Fang, Linjun Wang, Linjun Wang, Qingkai Zeng, Qingkai Zeng, Jian Huang, Jian Huang, Jijun Zhang, Jijun Zhang, Run Xu, Run Xu, Weimin Shi, Weimin Shi, Yiben Xia, Yiben Xia, "Preparation and photoelectric properties of a thin-film nanocrystalline diamond phototransistor", Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 73811N (24 August 2009); doi: 10.1117/12.835508; https://doi.org/10.1117/12.835508
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