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24 August 2009 The effect from the substrate reflection to the inclined UV lithography of SU-8 photoresist
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Proceedings Volume 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors; 73812T (2009) https://doi.org/10.1117/12.835048
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China
Abstract
Recently, the inclined UV lithography technology based on SU-8 negative thick photoresists has been mature and attractive due to the in-depth research of SU-8. With the increasing demand for the high-fidelity oblique structures of SU-8, the simulation of inclined UV lithography becomes more important. Based on the Fresnel-Kirchhoff diffraction theory, a simple light intensity distribution model is established in this paper by the Fresnel approximation and paraxial approximation solutions to simulate the 2D inclined UV lithography. The refraction and reflection at the air/photoresist interface and the reflection at the substrate surface are integrally considered in the modeling. The oblique SU-8 structures were fabricated on both glass wafers and silicon wafers, which show different reflection-induced profiles after development. According to the comparison of the simulation and experimental results, it is demonstrated that the substrate reflection has significant influence to the inclined UV lithography, and the validity of the model is also verified.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhen Zhu, Qing-An Huang, Wei-Hua Li, and Zai-Fa Zhou "The effect from the substrate reflection to the inclined UV lithography of SU-8 photoresist", Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 73812T (24 August 2009); https://doi.org/10.1117/12.835048
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