24 August 2009 Molecular dynamics study on Young's modulus of silicon nanostructures at finite temperature
Author Affiliations +
Proceedings Volume 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors; 73812U (2009) https://doi.org/10.1117/12.836706
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China
Abstract
In this paper, we investigate Young's modulus of Si nanofilms and Si nanowires under surface reconstruction with different temperature range from 100K to 800K by Molecular dynamics simulations. Young's modulus is calculated from energy-strain relationship. The results show that the Young's modulus of Si nanofilms decreases as temperature increases. The temperature effect on Young's modulus of Si nanowires also could not be ignored. Surface effect on nanostructures is more significant than on macrostructures, and Si nanostructures are more sensitive to heat.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yabin Wang, Yabin Wang, Hong Yu, Hong Yu, } "Molecular dynamics study on Young's modulus of silicon nanostructures at finite temperature", Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 73812U (24 August 2009); doi: 10.1117/12.836706; https://doi.org/10.1117/12.836706
PROCEEDINGS
7 PAGES


SHARE
RELATED CONTENT

Mechanical properties of ZnO nanowires
Proceedings of SPIE (February 11 2007)
Numerical demonstration of MEMS strain sensor
Proceedings of SPIE (April 03 2012)
Mechanics at small scales
Proceedings of SPIE (August 01 2004)

Back to Top