28 August 2009 The study on nonlinear bifurcation dynamics of a semiconductor ring laser
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Proceedings Volume 7382, International Symposium on Photoelectronic Detection and Imaging 2009: Laser Sensing and Imaging; 738213 (2009) https://doi.org/10.1117/12.832158
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China
Abstract
Based on dynamics models of the electronic bi-stable behavior in a semiconductor ring laser and using the methods of the modern nonlinear dynamics, the stability and bifuraction behavior in a semiconductor ring laser are analyzed and calculated in this paper. The calculated results show that the ring laser can undergoes the Hopf bifurcation by changing pump parameters which can lead the complex nonlinear movement such as limit cycle and Chaos. The effects of backscatter parameters on the operation regions are also calculated The calculated results show that the change of backscatter parameter can result different dynamics behaviors including bifurcation. At last the theoretical result is compared with experiment. The device process and structure is described and the experiment result agree with our theory.
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Bin Zhang, Bin Zhang, Lu-Hong Mao, Lu-Hong Mao, Sheng Xie, Sheng Xie, Wei-Lian Guo, Wei-Lian Guo, Yan Chen, Yan Chen, Xin Yu, Xin Yu, Xian-Jie Li, Xian-Jie Li, Li-Fang Qi, Li-Fang Qi, } "The study on nonlinear bifurcation dynamics of a semiconductor ring laser", Proc. SPIE 7382, International Symposium on Photoelectronic Detection and Imaging 2009: Laser Sensing and Imaging, 738213 (28 August 2009); doi: 10.1117/12.832158; https://doi.org/10.1117/12.832158
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