Paper
31 August 2009 Comparative research on femtosecond laser and nanosecond laser induced damage to CCD
Jing-jing Dai, Zhi-yong Wang
Author Affiliations +
Proceedings Volume 7382, International Symposium on Photoelectronic Detection and Imaging 2009: Laser Sensing and Imaging; 73823S (2009) https://doi.org/10.1117/12.835560
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China
Abstract
The contrastive damage experiments of CCD irradiated by 800nm femtosecond laser with the pulse duration of 330fs and 1064nm laser with the pulse duration of 10ns were studied from the energy density and power density. The failure problems of the CCD devices irradiated by the two kinds of laser pulses were studied. The experimental results show that the failure threshold of CCD irradiated by femtosecond laser is 2.3 nJ / cm2 and it is 3~4 order lower than that by nanosecond laser. According to the micro-analysis of CCD, it is found that the damage takes place at the light activated elements.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jing-jing Dai and Zhi-yong Wang "Comparative research on femtosecond laser and nanosecond laser induced damage to CCD", Proc. SPIE 7382, International Symposium on Photoelectronic Detection and Imaging 2009: Laser Sensing and Imaging, 73823S (31 August 2009); https://doi.org/10.1117/12.835560
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KEYWORDS
Charge-coupled devices

Femtosecond phenomena

Pulsed laser operation

Laser damage threshold

Laser energy

Laser induced damage

Attenuators

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