Ning Li, Hong-lou Zhen, Wang-ping Wang, Jian Wang, Xiao-shuang Chen, Zhi-feng Li, Wen-xin Wang, Hong Chen, Feng-qi Liu, et al.
Proceedings Volume International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications, 738306 (2009) https://doi.org/10.1117/12.839635
Quantum structure has been optimized for the excited state confinement to improve the detector performance of quantum
wells infrared detector (QWIP) and quantum dots infrared detector (QDIP). By the energy band engineering, the
quantum states in quantum structure are easier to be manipulated than the case in interband transition of bulk material.
Moreover, the confined state in resonant tunneling diode has shown its function to amplify the photo-excited carrier in
the order of 107, which imply that a new high sensitivity infrared detector will be resulted from the integration of such
amplification quantum structure with the quantum inter-subband transition structure. The optimized quantum structure
has been used for the QDIP linear array and very long wavelength QWIP linear array in the format of 256×1. The
response peak for QDIP is at 6μm. Two type of QWIP is developed with the response peak at 12μm and 15μm,
respectively.