Method for fabricating Au-Al0.30Ga0.70N lateral Schottky photodiode

Caijing Cheng; Zhengxiong Lu; Ian Zhao; Jiaxin Ding; Junjie Si; Weiguo Sun

doi:10.1117/12.834560

4 August 2009 Method for fabricating Au-Al_0.30Ga_0.70N lateral Schottky photodiode

Caijing Cheng, Zhengxiong Lu, Ian Zhao, Jiaxin Ding, Junjie Si, Weiguo Sun

Proceedings Volume 7383, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications; 73831X (2009) https://doi.org/10.1117/12.834560
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China

Abstract

Au-Al_0.30Ga_0.70N Lateral Schottky photodiode was fabricated by an electrical breakdown of a single Schottky barrier of metal-semiconductor-metal Au-Al_0.30Ga_0.70N film rocking curves are about 523.7 arcsec for the (00.2) plane reflection and about 989.5 arcsec for the (10.5) plane reflection. Dark current of the device is 1.2nA at the reverse bias of 1 V at room temperature. Analysis of the measured characteristics showed the ideality factor n, the zero-bias barrier height Φ_B0 and the serial resistance R_S are equal to 1.8, 0.80eV and 9.8KΩ, respectively. Ideality factor away from 1 and reverse leakage currents can be attributed from crystalline defects in the materials.

Citation Download Citation

Caijing Cheng, Zhengxiong Lu, Ian Zhao, Jiaxin Ding, Junjie Si, and Weiguo Sun "Method for fabricating Au-Al_0.30Ga_0.70N lateral Schottky photodiode", Proc. SPIE 7383, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications, 73831X (4 August 2009); https://doi.org/10.1117/12.834560

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