4 August 2009 Analysis of crosstalk in front-illuminated InGaAs PIN hetero-junction photovoltaic infrared detector arrays
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Abstract
Here presented an experimental study on crosstalk in front illuminated planar and mesa-type InP/ InGaAs/ InP PIN hetero-junction photovoltaic infrared detector arrays. A scanning laser beam with an optical wavelength of 1310 nm coupled in a single-mode optical fiber placed within a few microns of the detector array surface was used to measure the crosstalk between the detector pixels. The crosstalk in the detector array varying with the distance between the incident laser spot and the measured pixel was shown. It is suggested that for the deep mesa-type arrays the dominating source of crosstalk is the light reflected from the detector substrate. And the dominating source of crosstalk that occurs in the planar type and shallow mesa type photovoltaic arrays is associated with photo-induced carries generated in the InGaAs absorption layer that diffuse laterally between neighbor pixels. These results gave out the possibility to optimize the detectors structures in order to reduce crosstalk.
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Yongfu Li, Hengjing Tang, Kefeng Zhang, Tao Li, Jinhua Ning, Xue Li, Haimei Gong, "Analysis of crosstalk in front-illuminated InGaAs PIN hetero-junction photovoltaic infrared detector arrays", Proc. SPIE 7383, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications, 73831Z (4 August 2009); doi: 10.1117/12.835540; https://doi.org/10.1117/12.835540
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