Relationship between dark conductivity and temperature for amorphous HgCdTe films

Lianjie Yu; Yanli Shi; Wenjin He; Gongrong Deng; Fan Li; Rong Kang

doi:10.1117/12.836568

5 August 2009 Relationship between dark conductivity and temperature for amorphous HgCdTe films

Lianjie Yu, Yanli Shi, Wenjin He, Gongrong Deng, Fan Li, Rong Kang

Proceedings Volume 7383, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications; 73833N (2009) https://doi.org/10.1117/12.836568
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China

Abstract

The relationship between the dark conductivity (σ_d) and temperature (T) of amorphous HgCdTe films has been investigated at 80-300 K. The measurement of σ_d as a function of T indicates the presence of four distinct regions: (I) For 250K≤T<300 K(3.3<1000/T≤4.0), σ_d is strongly increase with T increasing, the transport mechanism is dominated by extended state conduction, (II) for 180K≤T<250 K(4<1000/T≤5.6), σ_d is linearly increase with T increasing, hopping conduction between localized band tail state dominates the transport mechanism, (III) for 120K≤T<180K (5.6<1000/T≤8.3), σ_d is very small and weakly increase with T increasing, constant-range hopping conduction in localized states near the Fermi energy significantly contributes to the transport properties, and (IV) 80K≤T<120K (8.3<1000/T≤12.5), the dark conductivity of amorphous HgCdTe films is very small and weakly decreases with temperature increasing, it would be possible that the conductivity type of amorphous HgCdTe films converted about 120K, i.e. from the n type converted to p type. The temperature behavior of σ_d of amorphous HgCdTe was described in terms of the Mott-Davis model.

Citation Download Citation

Lianjie Yu, Yanli Shi, Wenjin He, Gongrong Deng, Fan Li, and Rong Kang "Relationship between dark conductivity and temperature for amorphous HgCdTe films", Proc. SPIE 7383, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications, 73833N (5 August 2009); https://doi.org/10.1117/12.836568

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