Simulation of doping concentration and working temperature for MCT photodiode detector design

Ya-fang Tian; Yan-li Shi; Fan Li

doi:10.1117/12.836531

5 August 2009 Simulation of doping concentration and working temperature for MCT photodiode detector design

Ya-fang Tian, Yan-li Shi, Fan Li

Proceedings Volume 7383, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications; 73833R (2009) https://doi.org/10.1117/12.836531
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China

Abstract

Hg_1-xCd_xTe (MCT) Photovoltaic Detector is a very important detector for the second-Generation and third-Generation infrared Focal Plane Array (FPA) detectors. Zero-bias resistance-area products (R₀A) is an important factor of detector's performance whose value is determined by the dark current of photovoltaic detector. In this paper, with Synopsys device simulation software, both current-voltage characteristic and R₀A products of n-on-p MCT Photovoltaic Detector with x = 0.223 had been simulated and analyzed with varying implantation dose and working temperature in the voltage range of -0.3V~0V. The stimulated results indicated that dark current and R₀A products depended distinctly upon the doping concentration and working temperature of photovoltaic detectors, and the optimal doping concentration and appropriate working temperature were obtained for n-on-p MCT Photovoltaic Detector.

Citation Download Citation

Ya-fang Tian, Yan-li Shi, and Fan Li "Simulation of doping concentration and working temperature for MCT photodiode detector design", Proc. SPIE 7383, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications, 73833R (5 August 2009); https://doi.org/10.1117/12.836531

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