High frame rate PtSi CCD infrared sensors

Xue-tao Weng; Zhun-lie Tang

doi:10.1117/12.835713

6 August 2009 High frame rate PtSi CCD infrared sensors

Xue-tao Weng, Zhun-lie Tang

Proceedings Volume 7384, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Imaging Detectors and Applications; 73841X (2009) https://doi.org/10.1117/12.835713
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China

Abstract

By using 2μm design rule and silicon technology, PtSi128×128 high frame rate (500frame/second) progressive scan CCD devices has been designed, fabricated and applied. The CCD devices is of vertical 3 phases, horizontal 4 phases,3 level ,interline transfer and optimized optical cavity configuration. The pixel number is 128×128.The pixel size is 30×30 μm2.The factor of fulfill is about 27%. The guard ring is designed as 3μm. The interlace between guard ring and platinum silicide zone is 1μm. The channel stop is 2μm .The collection diode is 4.5×5μm2.The barrier between vertical CCD and platinum silicide is 3×5μm2.The width of vertical CCD is 9μm. The vertical super notch is not adopted. But accessional phosphorus ion is implanted in order to enhance charge capacity. The interlace between vertical 3 phases poly silicon is 1μm. The vertical clock frequency is 62.5 KHz. The width of horizontal CCD is 40μm. The notch is 3μm .It is selectable. The interlace between 4 phases poly silicon is also 1μm. The 4 phases poly silicon is fabricated by 3 layer poly silicon because of vertical 3 phases. The horizontal clock frequency is 10 MHz. The configuration of output amplifier is two stage source follower amplifier. LDD is adopted. The bandwidth of output amplifier is designed as 40 MHz. The sensitive of output amplifier is 4 μv/e. 90nm gate oxide and 70nm nitride layers are fabricated first. Than LOCOS,B diffusion, Buried channel, Notch(selectable), VCCD, Barrier, Channel stop, Poly1,Poly2,Poly3,Collecton diode, Guard ring, Source and drain, Platinum silicide , hole, aluminium are orderly fabricated. Parameter test is under 500 frame/second .NETD is 0.6K.Dynamic range is 64dB.Non-uniformity is 0.7%(corrected).The number of defect is zero.

Citation Download Citation

Xue-tao Weng and Zhun-lie Tang "High frame rate PtSi CCD infrared sensors", Proc. SPIE 7384, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Imaging Detectors and Applications, 73841X (6 August 2009); https://doi.org/10.1117/12.835713

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
9 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Charge-coupled devices

Optical amplifiers

Infrared sensors

Silicon

Diodes

Clocks

Platinum

Show All Keywords

Keywords/Phrases

Search In:

Publication Years