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4 August 2009 Optical properties of semiconductor nanostructures under intense terahertz radiation
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Abstract
The optical absorption properties of semiconductors and their nanostructures under intense terahertz (THz) radiation are investigated theoretically. We derived the extended Semiconductor Bloch Equations (SBEs), which include the effects of the Coulomb interaction among the photoexcited carriers and the effects of the applied external classical (static and/or THz) electric and magnetic fields. We presented two formulations of the SBEs in wavevector space and real space, respectively, which are appropriate to analyzing respective semiconductor structures. Different semiconductor nanostructures (such as quantum wells, quantum wires, quantum rings, quantumdot- superlattice nanowires, and quantum-dot-superlattice nanorings) in different configurations of the applied external fields (with the THz electric field applied along the heterostructure interface or the growth-direction) are considered. We showed that the driving of the THz field can give rise to many intriguing phenomena, such as THz dynamical Franz-Keldysh effect, ac Stark effect, THz-sideband, replica of dark exciton states. We also suggested some potential application of these new phenomena in developing novel semiconductor optoelectronic devices.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tong-Yi Zhang and Wei Zhao "Optical properties of semiconductor nanostructures under intense terahertz radiation", Proc. SPIE 7385, International Symposium on Photoelectronic Detection and Imaging 2009: Terahertz and High Energy Radiation Detection Technologies and Applications, 738505 (4 August 2009); https://doi.org/10.1117/12.835684
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