4 August 2009 Characterization of doped ZnCdTe crystals as THz emitters
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Characterization of doped ZnCdTe crystals as terahertz (THz) emitters is studied in detail. By measuring the absorption of THz wave and analyzing the phase matching condition in these crystals, it is found that the dispersion property of crystals and the self-absorption of THz waves in these crystals play important roles in THz radiation. It is also found that the direct current (DC) resistivity of the crystal for THz emitter application should be greater than 106Ωcm. The THz generation efficiency increases as their DC resistivity increases, but the efficiency saturates and even declines when the resistivity goes beyond 106Ωcm.
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Xiu-min Wang, Xiu-min Wang, Yu-lei Shi, Yu-lei Shi, Yu-ping Yang, Yu-ping Yang, } "Characterization of doped ZnCdTe crystals as THz emitters", Proc. SPIE 7385, International Symposium on Photoelectronic Detection and Imaging 2009: Terahertz and High Energy Radiation Detection Technologies and Applications, 738507 (4 August 2009); doi: 10.1117/12.835695; https://doi.org/10.1117/12.835695

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