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4 August 2009 Ultrafast high-field carrier transport in GaAs measured by femtosecond pump-terahertz probe spectroscopy
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Abstract
Femtosecond pump-terahertz probe studies of carrier dynamics in semi-insulating GaAs have been investigated in detail for various pump powers and at electric fields up to 15 kV/cm. The pump-induced attenuation of THz transmission reduces obviously at high field, and the carrier relaxation time is also found to be correlated with photo-injected carrier density and electric field. These effects can be fully explained in terms of the carrier intervalley scattering and the surface states filling in GaAs, which may influence the carrier recombination process. Moreover, the carrier screening effect at high pump powers is also discussed.
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Yulei Shi, Qing-li Zhou, Cunlin Zhang, and Bin Jin "Ultrafast high-field carrier transport in GaAs measured by femtosecond pump-terahertz probe spectroscopy", Proc. SPIE 7385, International Symposium on Photoelectronic Detection and Imaging 2009: Terahertz and High Energy Radiation Detection Technologies and Applications, 73850B (4 August 2009); https://doi.org/10.1117/12.834577
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