Fabrication and characterization of ZnO-based UV photodetectors

Jian Huang; Linjun Wang; Run Xu; Ke Tang; Weimin Shi; Yiben Xia

doi:10.1117/12.834889

4 August 2009 Fabrication and characterization of ZnO-based UV photodetectors

Jian Huang, Linjun Wang, Run Xu, Ke Tang, Weimin Shi, Yiben Xia

Proceedings Volume 7385, International Symposium on Photoelectronic Detection and Imaging 2009: Terahertz and High Energy Radiation Detection Technologies and Applications; 738512 (2009) https://doi.org/10.1117/12.834889
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China

Abstract

In this work, an Al-N-co-doped p-type ZnO film was deposited on the smooth nucleaction side of freestanding diamond film by radio-frequency (RF) reactive magnetron sputtering method. An intrinsic n-type ZnO layer was deposited on the p-type Al-N-co-doped ZnO film to fabricate ZnO p-n homojunction. The electrical properties of ZnO p-n homojunction in dark condition were investigated by a Keithley 4200/SCS digital semiconductor characterization system. The result exhibited the distinct rectifying current-voltage (I-V) characteristics with a turn-on voltage of ~2.2V. The homojunction was also used for UV photodetector application. Spectral response of the detector showed a significant discrimination between UV and the visible light.

Citation Download Citation

Jian Huang, Linjun Wang, Run Xu, Ke Tang, Weimin Shi, and Yiben Xia "Fabrication and characterization of ZnO-based UV photodetectors", Proc. SPIE 7385, International Symposium on Photoelectronic Detection and Imaging 2009: Terahertz and High Energy Radiation Detection Technologies and Applications, 738512 (4 August 2009); https://doi.org/10.1117/12.834889

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