4 August 2009 Fabrication and characterization of ZnO-based UV photodetectors
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Abstract
In this work, an Al-N-co-doped p-type ZnO film was deposited on the smooth nucleaction side of freestanding diamond film by radio-frequency (RF) reactive magnetron sputtering method. An intrinsic n-type ZnO layer was deposited on the p-type Al-N-co-doped ZnO film to fabricate ZnO p-n homojunction. The electrical properties of ZnO p-n homojunction in dark condition were investigated by a Keithley 4200/SCS digital semiconductor characterization system. The result exhibited the distinct rectifying current-voltage (I-V) characteristics with a turn-on voltage of ~2.2V. The homojunction was also used for UV photodetector application. Spectral response of the detector showed a significant discrimination between UV and the visible light.
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Jian Huang, Jian Huang, Linjun Wang, Linjun Wang, Run Xu, Run Xu, Ke Tang, Ke Tang, Weimin Shi, Weimin Shi, Yiben Xia, Yiben Xia, } "Fabrication and characterization of ZnO-based UV photodetectors", Proc. SPIE 7385, International Symposium on Photoelectronic Detection and Imaging 2009: Terahertz and High Energy Radiation Detection Technologies and Applications, 738512 (4 August 2009); doi: 10.1117/12.834889; https://doi.org/10.1117/12.834889
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