4 August 2009 Investigation on the two-step passivation process for CdZnTe detectors
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Abstract
In this paper, the composition, morphology and electrical properties of the passivation layer for CdZnTe detectors were investigated. A two-step passivation was performed under different conditions, including passivation time, temperature and NH4F/H2O2 concentration. The obtained passivation layers were characterized by XRD, SEM, XRF and I-V methods. The results showed that the best passivation condition was with the NH4F/H2O2 concentration of 10wt%, passivation time of 40min and temperature of 20ºC. Under this condition, the passivation layer was purely oxidized and compact, and the surface leakage current of CZT crystals was most effectively reduced.
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Dongni Hu, Dongni Hu, Linjun Wang, Linjun Wang, Jiahua Min, Jiahua Min, Yue Lu, Yue Lu, Jianyong Teng, Jianyong Teng, Kaifeng Qin, Kaifeng Qin, Jijun Zhang, Jijun Zhang, Jian Huang, Jian Huang, Yiben Xia, Yiben Xia, } "Investigation on the two-step passivation process for CdZnTe detectors", Proc. SPIE 7385, International Symposium on Photoelectronic Detection and Imaging 2009: Terahertz and High Energy Radiation Detection Technologies and Applications, 73851G (4 August 2009); doi: 10.1117/12.835534; https://doi.org/10.1117/12.835534
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