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4 August 2009 A novel single-poly floating-gate UV sensor using standard CMOS process
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Abstract
This paper proposes a novel single-poly floating gate (FG) UV sensor in standard CMOS process. The sensor cell is based on PMOS FG and only adopts four transistors including sensitive component and readout amplifier. The architecture is compact and feasible for future high density array chip implementation. A theoretical analysis of sensor sensitivity is described in detail. As the sensor is compatible with standard single poly CMOS process, it has the merits of low cost, more sensitive, and be integrated with signal processing system. A prototype chip is manufactured in a 0.18μm single-poly standard CMOS logic process. The tested results indicate that the sensor is sensitive to the incoming UV irradiation.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guike Li, Yunlong Li, Peng Feng, and Nanjian Wu "A novel single-poly floating-gate UV sensor using standard CMOS process", Proc. SPIE 7385, International Symposium on Photoelectronic Detection and Imaging 2009: Terahertz and High Energy Radiation Detection Technologies and Applications, 73852B (4 August 2009); https://doi.org/10.1117/12.836786
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