4 August 2009 Light interference effects: a tool for the modulation of the Si-nc luminescence spectrum and the determination of the emitting center depth distribution
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Proceedings Volume 7386, Photonics North 2009; 73860Z (2009) https://doi.org/10.1117/12.838463
Event: Photonics North 2009, 2009, Quebec, Canada
Abstract
Recently, it has been shown that the photoluminescence (PL) spectrum emitted by silicon nanocrystals (Si-nc) can be modulated by means of light interference effects, when the Si-nc are produced by the implantation of Si ions in a SiO2 film grown on Si substrate (SiO2/Si). Optical interference must be considered for both the pump laser and the light emitted by the Silicon nanocrystals. In this study, strong variations of the PL spectrum intensity are observed as a function of the SiO2 thickness so that a PL intensity up to three times greater than the one recorded from Si-nc embedded in fused silica has been observed. A Fresnel equation solver [1, 2] has been developed and used to model the emission spectrum of Si-nc in these structures. This model determines the normalized depth profile of emitting centers using the measured luminescence spectra of a series of samples covering a range of SiO2 thicknesses, providing a powerful tool for the study of the Si-nc luminescence mechanism by comparing the shape of the emitter depth profile to those of Si-nc and implanted Si+ depth distributions.
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C. Dahmoune, D. Barba, F. Martin, G. G. Ross, "Light interference effects: a tool for the modulation of the Si-nc luminescence spectrum and the determination of the emitting center depth distribution", Proc. SPIE 7386, Photonics North 2009, 73860Z (4 August 2009); doi: 10.1117/12.838463; https://doi.org/10.1117/12.838463
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