4 August 2009 Modeling of a multicharged ion beam line using SIMION
Author Affiliations +
Proceedings Volume 7386, Photonics North 2009; 73862B (2009) https://doi.org/10.1117/12.833347
Event: Photonics North 2009, 2009, Quebec, Canada
Abstract
Multicharged ion beams (MCI) are promising tools to probe or modify the surface of materials with applications in microelectronics and nanotechnology. Ion beam lines are parts of the MCI systems connecting the ion source with the processing chamber and they perform the function of extracting, accelerating, decelerating, focusing and scanning the ion beam on the surface of the target. In our work we present results of modeling of an MCI beam line using the SIMION code to simulate the flight of ions, with the purpose of optimizing the yield of the line and avoiding spurious effects due to interaction of the ions with the metallic elements of the line, such as heating, outgassing and excessive Xray emission. We show that a two stage ion extractor could significantly reduce ion beam losses.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael L. Korwin-Pawlowski, Karima Amiz, Hani Elsayed-Ali, "Modeling of a multicharged ion beam line using SIMION", Proc. SPIE 7386, Photonics North 2009, 73862B (4 August 2009); doi: 10.1117/12.833347; https://doi.org/10.1117/12.833347
PROCEEDINGS
10 PAGES


SHARE
RELATED CONTENT

Source of intense beam of ions with low energy
Proceedings of SPIE (November 28 2000)
New source of energetic neutral particles
Proceedings of SPIE (November 04 1994)
Intense electron beam in electron cooling method
Proceedings of SPIE (April 01 2003)
High-energy ions produced from cluster explosions
Proceedings of SPIE (April 23 2001)
Focused ion beam source of a new type for micro...
Proceedings of SPIE (April 29 2008)

Back to Top