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17 June 2009 Profilometry of semiconductor components by two-colour holography with Bi12TiO20 crystals
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We studied the shape measurement of semiconductor components by holography with photorefractive Bi12TiO20 crystal as holographic medium and two diode lasers emitting in the red region as light sources. By properly tuning and aligning the lasers a synthetic wavelength was generated and the resulting holographic image of the studied object appears modulated by cos2-contour fringes which correspond to the intersection of the object surface with planes of constant elevation. The position of such planes as a function of the illuminating beam angle and the tuning of the lasers was studied, as well as the fringe visibility. The fringe evaluation was performed by the four stepping technique for phase mapping and through the branch-cut method for phase unwrapping. A damage in an integrated circuit was analysed as well as the relief of a coin was measured, and a precision up to 10 μm was estimated.
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André Oliveira Preto and Eduardo Acedo Barbosa "Profilometry of semiconductor components by two-colour holography with Bi12TiO20 crystals", Proc. SPIE 7389, Optical Measurement Systems for Industrial Inspection VI, 73890R (17 June 2009);

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