Phase Conjugation In Semiconductor Lasers

Ian McMichael; Monte Khoshnevisan; Pochi Yeh

doi:10.1117/12.939695

22 April 1988 Phase Conjugation In Semiconductor Lasers

Ian McMichael, Monte Khoshnevisan, Pochi Yeh

Proceedings Volume 0739, Phase Conjugation, Beam Combining, and Diagnostics; (1988) https://doi.org/10.1117/12.939695
Event: OE LASE'87 and EO Imaging Symposium, 1987, Los Angeles, CA, United States

Abstract

We demonstrate phase-conjugate reflectivities on the order of 1000 at frequency detunings on the order of 0.5 GHz in intracavity nondegenerate four-wave mixing in a semiconductor laser. Our measurements show that, unlike a third-order nonlinearity, the conjugate reflectivity does not scale like the pump power squared, indicating that saturation and cavity effects are important in the generation of the conjugate.

Citation Download Citation

Ian McMichael, Monte Khoshnevisan, and Pochi Yeh "Phase Conjugation In Semiconductor Lasers", Proc. SPIE 0739, Phase Conjugation, Beam Combining, and Diagnostics, (22 April 1988); https://doi.org/10.1117/12.939695

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