18 August 2009 Spin noise spectroscopy in semiconductors
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Abstract
We demonstrate spin noise spectroscopy as an efficient and surprisingly sensitive experimental tool to measure the spin dynamics of free and localized carriers in semiconductors. The technique suppresses perturbations and gives access to intrinsic spin relaxation times by omitting optical excitation. We show the power of spin noise spectroscopy for basic physics by measurements on n-type modulation doped (110) GaAs quantum wells. The measurements reveal that the spin relaxation times are limited by stochastic spin-orbit fields and that the spin can be used as marker for the observation of electron diffusion processes at thermal equilibrium. We show the power of spin noise spectroscopy for applied physics, by three dimensional measurements of the doping distribution in direct semiconductors.
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Michael Oestreich, Michael Römer, Georg Müller, Dieter Schuh, Werner Wegscheider, Jens Hübner, "Spin noise spectroscopy in semiconductors", Proc. SPIE 7398, Spintronics II, 739802 (18 August 2009); doi: 10.1117/12.824177; https://doi.org/10.1117/12.824177
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