Probability current related to a non-quadratic Hamiltonian: application to semiconductors

Henri-Jean Drouhin; Jean-Eric Wegrowe; T. L. Hoai Nguyen; Guy Fishman

doi:10.1117/12.828037

24 August 2009 Probability current related to a non-quadratic Hamiltonian: application to semiconductors

Henri-Jean Drouhin, Jean-Eric Wegrowe, T. L. Hoai Nguyen, Guy Fishman

Author Affiliations +

Proceedings Volume 7398, Spintronics II; 73980Z (2009) https://doi.org/10.1117/12.828037
Event: SPIE NanoScience + Engineering, 2009, San Diego, California, United States

Abstract

In non-centrosymmetric semiconductors with zinc-blende structure grown along the [110] crystallographic direction, electrons with up and down spins undergo different quantum phase shifts upon tunneling, which can be wieved as resulting from spin precession around a complex magnetic field. There is no spin filtering but a pure spin dephasing. The phase shift of the transmitted wave is proportional to the overall barrier-material thickness. We show that a device incorporating a number of resonant tunnel barriers constitutes an efficient quantum-phase shifter.

Citation Download Citation

Henri-Jean Drouhin, Jean-Eric Wegrowe, T. L. Hoai Nguyen, and Guy Fishman "Probability current related to a non-quadratic Hamiltonian: application to semiconductors", Proc. SPIE 7398, Spintronics II, 73980Z (24 August 2009); https://doi.org/10.1117/12.828037

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