20 August 2009 Gating of single layer graphene using DNA
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Single strand DNA (ss-DNA) fragments act as negative potential gating agents that increase the hole density in graphene. Patterning of biomolecules on graphene could provide new avenues to modulate the electrical properties. Current-voltage characterization of this hybrid ss-DNA / graphene system indicates a shift of the Dirac point and "intrinsic" conductance after ss-DNA is deposited. The effect of the ss-DNA is to increase the hole density in the graphene. The increased hole density is calculated to be 2 × 1012 cm-2. This increase is consistent with the Raman frequency shifts in the G peak and 2D band positions and the corresponding changes in the G-peak full-width half maximum. Ab initio calculations using density functional theory rule out significant charge transfer or modification of the graphene bandstructure in the presence of the ss-DNA fragments.
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Jian Lin, Jian Lin, Desalegne Teweldebrhan, Desalegne Teweldebrhan, Khalid Ashraf, Khalid Ashraf, Guanxiong Liu, Guanxiong Liu, Xiaoye Jing, Xiaoye Jing, Zhong Yan, Zhong Yan, Rong Li, Rong Li, Roger K. Lake, Roger K. Lake, Mihri Ozkan, Mihri Ozkan, Alexander A. Balandin, Alexander A. Balandin, Cengiz S. Ozkan, Cengiz S. Ozkan, "Gating of single layer graphene using DNA", Proc. SPIE 7403, Nanobiosystems: Processing, Characterization, and Applications II, 74030C (20 August 2009); doi: 10.1117/12.826801; https://doi.org/10.1117/12.826801

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