24 August 2009 Photo-reflectance characterization of USJ activation in millisecond annealing
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Proceedings Volume 7405, Instrumentation, Metrology, and Standards for Nanomanufacturing III; 74050T (2009); doi: 10.1117/12.830900
Event: SPIE NanoScience + Engineering, 2009, San Diego, California, United States
Abstract
Photo-reflectance (PR) provides an optical means for rapid and precise measurement of near-surface electric fields in semiconductor materials. This paper details the use of photo-reflectance to characterize dopant activation in ultra-shallow junction (USJ) structures formed using millisecond anneal processes. USJ structures were formed in silicon using 500eV boron implantation with a dose of 1015/cm2, followed by flash anneals at 1250-1350°C. Reference metrology was performed using secondary ion mass spectroscopy (SIMS) and various sheet resistance (Rs) methods. Methods to calibrate photo-reflectance signals to active carrier concentration in USJ structures, including halo-doped samples, are described. Photo-reflectance is shown to be highly sensitive to active dopant concentration in USJ structures formed by millisecond annealing. Additionally, PR provides fast "on-product" measurement capability.
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Will Chism, Michael Current, Victor Vartanian, "Photo-reflectance characterization of USJ activation in millisecond annealing", Proc. SPIE 7405, Instrumentation, Metrology, and Standards for Nanomanufacturing III, 74050T (24 August 2009); doi: 10.1117/12.830900; https://doi.org/10.1117/12.830900
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KEYWORDS
Modulation

Semiconductors

Reflectivity

Diffusion

Silicon

Laser beam diagnostics

Annealing

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