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20 August 2009 Chemical vapor deposition of copper oxide films for photoelectrochemical hydrogen production
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Abstract
Copper oxide films have been shown to be a promising electrode material for the direct production of hydrogen by the photoelectrochemical (PEC) decomposition of water. In this paper, we present our work in developing a hot-wall tubular CVD reactor for copper oxide film deposition using a solid-source copper precursor and oxygen. Initial deposition results have shown that the reactor can reliably deposit solid polycrystalline cuprous oxide films and porous cupric oxide films, both being promising PEC materials. Unusual spatial patters observed in the film composition prompted the development of a physically based mathematical model of the CVD process. Initial results of this modeling work and its role in understanding and optimizing the deposition process will be presented.
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Glenn Guglietta, Timon Wanga, Ranjan Pati, Sheryl Ehrman, and Raymond A. Adomaitis "Chemical vapor deposition of copper oxide films for photoelectrochemical hydrogen production", Proc. SPIE 7408, Solar Hydrogen and Nanotechnology IV, 740807 (20 August 2009); https://doi.org/10.1117/12.826711
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