Paper
20 August 2009 2D modeling of silicon based thin film dual and triple junction solar cells
Y. G. Xiao, K. Uehara, M. Lestrade, Z. Q. Li, Z. M. Simon Li
Author Affiliations +
Abstract
Based on Crosslight APSYS, thin film amorphous Si (a-Si:H)/microcrystalline (μc-Si) dual-junction (DJ) and a- Si:H/amorphous SiGe:H (a-SiGe:H)/μc-Si triple-junction (TJ) solar cells are modeled. Basic physical quantities like band diagrams, optical absorption and generation are obtained. Quantum efficiency and I-V curves for individual junctions are presented for current matching analyses. The whole DJ and TJ cell I-V curves are also presented and the results are discussed with respect to the top surface ZnO:Al TCO layer affinity. The interface texture effect is modeled with FDTD (finite difference time domain) module and results for top junction are presented. The modeling results give possible clues to achieve high efficiency for DJ and TJ thin film solar cells.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. G. Xiao, K. Uehara, M. Lestrade, Z. Q. Li, and Z. M. Simon Li "2D modeling of silicon based thin film dual and triple junction solar cells", Proc. SPIE 7409, Thin Film Solar Technology, 74090F (20 August 2009); https://doi.org/10.1117/12.826262
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Cited by 1 scholarly publication.
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KEYWORDS
Solar cells

Finite-difference time-domain method

Thin film solar cells

Transparent conductors

Thin films

Silicon

External quantum efficiency

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