Hybrid a-Si/nc-Si solar cells fabricated on a directly-deposited textured zinc oxide transparent conductor

Alan E. Delahoy; Tongyu Liu; Gaurav Saraf; Anamika Patel; John Cambridge; Sheyu Guo; Paola Delli Veneri; Lucia V. Mercaldo; Iurie Usatii

doi:10.1117/12.827085

20 August 2009 Hybrid a-Si/nc-Si solar cells fabricated on a directly-deposited textured zinc oxide transparent conductor

Alan E. Delahoy, Tongyu Liu, Gaurav Saraf, Anamika Patel, John Cambridge, Sheyu Guo, Paola Delli Veneri, Lucia V. Mercaldo, Iurie Usatii

Author Affiliations +

Proceedings Volume 7409, Thin Film Solar Technology; 74090G (2009) https://doi.org/10.1117/12.827085
Event: SPIE Solar Energy + Technology, 2009, San Diego, California, United States

Abstract

This paper reports the development of a VHF PECVD process at 40.68 MHz for deposition of device-grade nc-Si:H. It further reports the evaluation of textured ZnO:Al films produced by hollow cathode sputtering as regards their suitability to serve as a TCO substrate for a-Si:H / nc-Si:H tandem device fabrication. The tandem devices were produced using an established VHF PECVD process at 100 MHz. Both VHF processes are capable of producing similar nc-Si:H material based on their analysis using micro-Raman spectroscopy. For the tandem junction devices, a peak in device efficiency was obtained at a Raman crystalline fraction of 50-52 % and a microstructure parameter of 0.60-0.68. A best tandem cell efficiency of 9.9% was achieved on HC ZnO compared to 11.3% on a reference Type-U SnO₂ substrate.

Citation Download Citation

Alan E. Delahoy, Tongyu Liu, Gaurav Saraf, Anamika Patel, John Cambridge, Sheyu Guo, Paola Delli Veneri, Lucia V. Mercaldo, and Iurie Usatii "Hybrid a-Si/nc-Si solar cells fabricated on a directly-deposited textured zinc oxide transparent conductor", Proc. SPIE 7409, Thin Film Solar Technology, 74090G (20 August 2009); https://doi.org/10.1117/12.827085

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