20 August 2009 Hybrid a-Si/nc-Si solar cells fabricated on a directly-deposited textured zinc oxide transparent conductor
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Abstract
This paper reports the development of a VHF PECVD process at 40.68 MHz for deposition of device-grade nc-Si:H. It further reports the evaluation of textured ZnO:Al films produced by hollow cathode sputtering as regards their suitability to serve as a TCO substrate for a-Si:H / nc-Si:H tandem device fabrication. The tandem devices were produced using an established VHF PECVD process at 100 MHz. Both VHF processes are capable of producing similar nc-Si:H material based on their analysis using micro-Raman spectroscopy. For the tandem junction devices, a peak in device efficiency was obtained at a Raman crystalline fraction of 50-52 % and a microstructure parameter of 0.60-0.68. A best tandem cell efficiency of 9.9% was achieved on HC ZnO compared to 11.3% on a reference Type-U SnO2 substrate.
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Alan E. Delahoy, Alan E. Delahoy, Tongyu Liu, Tongyu Liu, Gaurav Saraf, Gaurav Saraf, Anamika Patel, Anamika Patel, John Cambridge, John Cambridge, Sheyu Guo, Sheyu Guo, Paola Delli Veneri, Paola Delli Veneri, Lucia V. Mercaldo, Lucia V. Mercaldo, Iurie Usatii, Iurie Usatii, } "Hybrid a-Si/nc-Si solar cells fabricated on a directly-deposited textured zinc oxide transparent conductor", Proc. SPIE 7409, Thin Film Solar Technology, 74090G (20 August 2009); doi: 10.1117/12.827085; https://doi.org/10.1117/12.827085
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